Effects of TiN Buffer Layer Thickness on GaN Growth
نویسندگان
چکیده
منابع مشابه
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD
The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(1 1 1) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of th...
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a Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan b Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan c Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA d Department of Electrophysics, National Chiao Tung University, 1...
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ژورنال
عنوان ژورنال: Journal of Electronic Materials
سال: 2008
ISSN: 0361-5235,1543-186X
DOI: 10.1007/s11664-008-0597-y